共 11 条
[1]
MECHANISM OF ALKALI-PROMOTED OXIDATION OF SILICON
[J].
APPLIED PHYSICS LETTERS,
1987, 51 (21)
:1714-1716
[2]
SCANNING-TUNNELING-MICROSCOPY STUDIES OF THE OXIDATION OF GE(111)-C(2X8)
[J].
PHYSICAL REVIEW B,
1991, 44 (11)
:5603-5605
[3]
JEON D, 1996, J PHYS C SOLID STATE, V5, P189
[4]
JEON D, IN PRESS
[5]
KLITSNER T, 1991, PHYS REV B, V44, P5603
[7]
ELECTRONIC-PROPERTIES OF O-2 ON CS OR NA OVERLAYERS ADSORBED ON SI(100)2X1 FROM ROOM-TEMPERATURE TO 650-DEGREES-C
[J].
PHYSICAL REVIEW B,
1987, 35 (08)
:4176-4179
[8]
SOUKIASSIAN P, 1987, J VAC SCI TECHNOL A, V5, P1425
[9]
THERMAL GROWTH OF SIO2-SI INTERFACES ON A SI(111)7X7 SURFACE MODIFIED BY CESIUM
[J].
PHYSICAL REVIEW B,
1988, 37 (03)
:1315-1319