SCANNING-TUNNELING-MICROSCOPY STUDIES OF THE OXIDATION OF GE(111)-C(2X8)

被引：7

作者：

HIRSCHORN, ES ^{[1
]}

LEIBSLE, FM ^{[1
]}

CHIANG, TC ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.44.5603

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy was employed for an investigation of the oxidation process of the Ge(111)-c (2 X 8) surface at room temperature. Images of the same area of the surface were obtained for various exposures of oxygen. The results show that the oxidation proceeds by nucleation followed by expansion of the oxidized area.

引用

收藏

页码：5603 / 5605

页数：3

相关论文

共 10 条

[1] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J].

BECKER, RS ;

SWARTZENTRUBER, BS ;

VICKERS, JS ;

KLITSNER, T .

PHYSICAL REVIEW B, 1989, 39 (03) :1633-1647

[2] TUNNELING IMAGES OF GERMANIUM SURFACE RECONSTRUCTIONS AND PHASE BOUNDARIES [J].

BECKER, RS ;

GOLOVCHENKO, JA ;

SWARTZENTRUBER, BS .

PHYSICAL REVIEW LETTERS, 1985, 54 (25) :2678-2680

[3] CHARGE-TRANSFER AND ASYMMETRY ON GE(111)-C(2X8) STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

HIRSCHORN, ES ;

LIN, DS ;

LEIBSLE, FM ;

SAMSAVAR, A ;

CHIANG, TC .

PHYSICAL REVIEW B, 1991, 44 (03) :1403-1406

[4] SCANNING-TUNNELING-MICROSCOPE OBSERVATION OF SURFACE-DIFFUSION ON AN ATOMIC SCALE - AU ON AU(111) [J].

JAKLEVIC, RC ;

ELIE, L .

PHYSICAL REVIEW LETTERS, 1988, 60 (02) :120-123

[5] OXIDATION OF SI(111)-(7X7) AS STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

LEIBSLE, FM ;

SAMSAVAR, A ;

CHIANG, TC .

PHYSICAL REVIEW B, 1988, 38 (08) :5780-5783

[6] ATOMIC-STRUCTURE OF CU ADLAYERS ON AU(100) AND AU(111) ELECTRODES OBSERVED BY INSITU SCANNING TUNNELING MICROSCOPY [J].

MAGNUSSEN, OM ;

HOTLOS, J ;

NICHOLS, RJ ;

KOLB, DM ;

BEHM, RJ .

PHYSICAL REVIEW LETTERS, 1990, 64 (24) :2929-2932

[7] SUCCESSIVE OXIDATION STAGES OF ADATOMS ON THE SI(111) 7 X 7 SURFACE OBSERVED WITH SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY [J].

PELZ, JP ;

KOCH, RH .

PHYSICAL REVIEW B, 1990, 42 (06) :3761-3764

[8] ABSOLUTE DETERMINATION OF SURFACE CORE-LEVEL EMISSION FOR GE(100)-(2X1) AND GE(111)-C(2X8) - SURFACE RECONSTRUCTION AND DEFECTS [J].

RICH, DH ;

MILLER, T ;

CHIANG, TC .

PHYSICAL REVIEW LETTERS, 1988, 60 (04) :357-360

[9] OXYGEN-ADSORPTION ON GE(111) SURFACE .1. ATOMIC CLEAN SURFACE [J].

SURNEV, L .

SURFACE SCIENCE, 1981, 110 (02) :439-457

[10] REAL-TIME OBSERVATION OF OXYGEN AND HYDROGEN ADSORPTION ON SILICON SURFACES BY SCANNING TUNNELING MICROSCOPY [J].

TOKUMOTO, H ;

MIKI, K ;

MURAKAMI, H ;

BANDO, H ;

ONO, M ;

KAJIMURA, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (01) :255-258