AlxGa1-xN/GaN heterostructure field effect transistors with various Al mole fractions in AlGaN barrier

被引：4

作者：

Chen, WS

Chang, SJ

Su, YK

Wang, RL

Kuo, CH

Shei, SC

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[3] Natl Kaohsiung Marine Univ, Dept Microelect, Kaohsiung 811, Taiwan

[4] S Epitaxy Corp, Hsin 744, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 3-4期

关键词：

AlGaN/GaN; Mg-doped layer; Al composition; HFET;

D O I：

10.1016/j.jcrysgro.2004.12.007

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxGa1-xN/GaN heterostructure field-effect transistors (HFETs) with different Al mole fractions were grown on sapphire substrates. With a 5-nm-thick undoped AlxGa1-xN spacer layer and a 14-nm-thick Si-doped AlxGa1-xN layer, it was found that we achieved the largest product value of sheet carrier concentration and electron mobility from the sample with an Al mole fraction of 0.32. Due to the insertion of an Mg-doped GaN layer, it was found that all samples exhibit good pinch-off characteristics. With a 1-mu m-gate length, the measured saturation I-DS were 207, 270, 430, and 355 mA/mm while the maximum g, were 84, 129, 165, and 137 mS/mm for samples with an Al composition of 0.22, 0.26, 0.32 and 0.36, respectively. (c) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：398 / 403

页数：6

相关论文

共 29 条

[1] Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters [J].

Akasaki, I ;

Amano, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A) :5393-5408

[2] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[3] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].

Ambacher, O ;

Foutz, B ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Sierakowski, AJ ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Mitchell, A ;

Stutzmann, M .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) :334-344

[4] Material optimisation for AlGaN/GaN HFET applications [J].

Bougrioua, Z ;

Moerman, I ;

Sharma, N ;

Wallis, RH ;

Cheyns, J ;

Jacobs, K ;

Thrush, EJ ;

Considine, L ;

Beanland, R ;

Farvacque, JL ;

Humphreys, C .

JOURNAL OF CRYSTAL GROWTH, 2001, 230 (3-4) :573-578

[5] THE INFLUENCE OF THE STRAIN-INDUCED ELECTRIC-FIELD ON THE CHARGE-DISTRIBUTION IN GAN-ALN-GAN STRUCTURE [J].

BYKHOVSKI, A ;

GELMONT, B ;

SHUR, M .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (11) :6734-6739

[6] Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors [J].

Bykhovski, AD ;

Gaska, R ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1998, 73 (24) :3577-3579

[7] Nitride-based LEDs with p-InGaN capping layer [J].

Chang, SJ ;

Chen, CH ;

Chang, PC ;

Su, YK ;

Chen, PC ;

Jhou, YD ;

Hung, H ;

Wang, SM ;

Huang, BR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2567-2570

[8] Highly reliable nitride-based LEDs with SPS plus ITO upper contacts [J].

Chang, SJ ;

Chang, CS ;

Su, YK ;

Chuang, RW ;

Lin, YC ;

Shei, SC ;

Lo, HM ;

Lin, HY ;

Ke, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2003, 39 (11) :1439-1443

[9] AlGaN/GaN modulation-doped field-effect transistors with an Mg-doped carrier confinement layer [J].

Chang, SJ ;

Wei, SC ;

Su, YK ;

Liu, CH ;

Chen, SC ;

Liaw, UH ;

Tsai, TY ;

Hsu, TH .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6A) :3316-3319

[10] GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts [J].

Chang, SJ ;

Lee, ML ;

Sheu, JK ;

Lai, WC ;

Su, YK ;

Chang, CS ;

Kao, CJ ;

Chi, GC ;

Tsai, JA .

IEEE ELECTRON DEVICE LETTERS, 2003, 24 (04) :212-214