Negative V-BE shift due to base dopant outdiffusion in DHBT

被引：5

作者：

Borgarino, M

Paorici, F

Fantini, F

机构：

[1] Dipto. Ingegneria dell'Informazione, Universitá di Parma, 43100 Parma, Viale delle Scienze

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 09期

关键词：

D O I：

10.1016/0038-1101(96)00041-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

By applying a light electrical stress at room temperature to an ALE grown, double mesa processed DHBT and comparing the experimental data with numerical simulations, interesting new results are obtained on the stability of a Be doped base layer. For the first time the negative shift of V-BE is demonstrated to be a consequence of Be outdiffusion and a quantitative investigation of the outdiffusion length into an intrinsic setback layer is carried out. The role of band-gap narrowing is also explained. Copyright (C) 1996 Elsevier Science Ltd

引用

收藏

页码：1305 / 1310

页数：6

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