Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene

被引：792

作者：

Vlassiouk, Ivan ^{[1
]}

Regmi, Murari ^{[2
]}

Fulvio, Pasquale F. ^{[3
]}

Dai, Sheng ^{[3
]}

Datskos, Panos ^{[1
]}

Eres, Gyula ^{[2
]}

Smirnov, Sergei ^{[4
]}

机构：

[1] Oak Ridge Natl Lab, Measurement Sci & Syst Engn Div, Oak Ridge, TN 37831 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[3] Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA

[4] New Mexico State Univ, Dept Chem & Biochem, Las Cruces, NM 88003 USA

来源：

ACS NANO | 2011年 / 5卷 / 07期

关键词：

graphene; CVD; grain; domain; mechanism; hydrogen; hexagons; FILMS; DISSOCIATION; CU(100);

D O I：

10.1021/nn201978y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We show that graphene chemical vapor deposition growth on copper foil using methane as a carbon source is strongly affected by hydrogen, which appears to serve a dual role: an activator of the surface bound carbon that Is necessary for monolayer growth and an etching reagent that controls the size and morphology of the graphene domains. The resulting growth rate for a fixed methane partial pressure has a maximum at hydrogen partial pressures 200-400 times that of methane. The morphology and size of the graphene domains, as well as the number of layers, change with hydrogen pressure from irregularly shaped incomplete bilayers to well-defined perfect single layer hexagons. Raman spectra suggest the zigzag termination in the hexagons as more stable than the armchair edges.

引用

页码：6069 / 6076

页数：8

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