Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition

被引：34

作者：

Craciun, V ^{[1
]}

Craciun, D

Chen, Z

Hwang, J

Singh, RK

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Inst Atom Phys, Bucharest, Romania

[3] Natl Inst Laser Plasma & Radiat Phys, Bucharest, Romania

[4] Univ Florida, Dept Phys, Gainesville, FL 32611 USA

来源：

APPLIED SURFACE SCIENCE | 2000年 / 168卷 / 1-4期

关键词：

indium tin oxide; transparent and conductive oxides; laser ablation; ultraviolet;

D O I：

10.1016/S0169-4332(00)00832-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin indium tin oxide (ITO) films were grown at room temperature on (1 0 0) Si and Coming glass by an in situ ulttaviolet-assisted pulsed laser deposition (UVPLD) technique. The oxygen pressure during the growth markedly influenced the properties of the films. For oxygen pressure below 1 mTorr; films exhibited very low optical transmittance and high resistivity. The resistivity decreased when using higher oxygen pressures while the optical transmittance increased, For a target-substrate distance of 10.5 cm, the optimum oxygen pressure was found to be around 10 mTorr. For higher oxygen pressures, the optical transmittance was higher but a rapid increase of the electrical resistivity was noticed. X-ray photoelectron spectroscopy showed that ITO films grown at 10 mTorr were fully oxidized, All grown films were amorphous regardless of the oxygen pressure used. (C) 2000 Published by Elsevier Science B.V.

引用

页码：118 / 122

页数：5

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