Characterization of silicon oxynitride thin films by infrared reflection absorption spectroscopy

被引：20

作者：

Firon, M ^{[1
]}

Bonnelle, C ^{[1
]}

Mayeux, A ^{[1
]}

机构：

[1] IBM FRANCE, LAB ANAL, SERV 1668, F-91108 CORBEIL ESSONNES, FRANCE

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1996年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.580007

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon oxynitride thin films deposited by plasma enhanced chemical vapor deposition on various substrates have been characterized by infrared reflection absorption spectroscopy. Shifts of the LO Si-O vibrational band to lower wave numbers have been observed with increasing N content and also with the thickness of the films. We observe that the ratio of LO Si-O vibrational mode wave number to him thickness (v/t) varies linearly with the ratio of refractive index to thickness (n/t). This linear relationship does not depend on the nature of substrates on which films are deposited (Al/Si, Si, Si/Al). Our results show that the composition of silicon oxynitride films could be determined directly by measuring the LO Si-O mode position. (C) 1996 American Vacuum Society.

引用

页码：2488 / 2492

页数：5

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