Composition effects on the crystal structure of CuInSe2

被引:67
作者
Merino, JM
deVidales, JLM
Mahanty, S
Diaz, R
Rueda, F
Leon, M
机构
[1] Depto. de Fisica Aplicada, C-XII, Universidad Autonoma de Madrid
关键词
D O I
10.1063/1.363611
中图分类号
O59 [应用物理学];
学科分类号
摘要
By x-ray powder diffraction and the Rietveld refinement method, the atomic positions in CuInSe2 were determined for compositions close to stoichiometry. The Se position, x(Se) was found to be correlated to the Cu content. According to a model proposed by Jaffe and Zunger [Phys. Rev, B 29, 1882 (1984)], changes in x(Se) induce a variation in the optical band gap, E(g). This could explain the spread in energy gap, E(g), found by many authors for this compound. The increase in the lattice parameter, a, correlated with the difference between the energy dispersive analysis of x rays and x-ray diffraction determined Cu contents, suggests the presence of a fraction of Cu atoms as interstitials. (C) 1996 American Institute of Physics.
引用
收藏
页码:5610 / 5616
页数:7
相关论文
共 54 条
  • [41] Shay J., 1975, Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications
  • [42] GROWTH BY DIRECTIONAL FREEZING OF CUINSE2 AND DIFFUSED HOMOJUNCTIONS IN BULK MATERIAL
    SHIH, I
    CHAMPNESS, CH
    SHAHIDI, AV
    [J]. SOLAR CELLS, 1986, 16 (1-4): : 27 - 41
  • [43] BORON-NITRIDE POWDER COATING OF AMPOULE FOR BRIDGMAN-GROWN CUINSE2
    SHUKRI, ZA
    CHAMPNESS, CH
    SHIH, I
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 129 (1-2) : 107 - 110
  • [44] OPTICAL-PROPERTIES OF CUINSE2 THIN-FILMS
    SOLIMAN, HS
    ELNAHAS, MM
    JAMJOUM, O
    MADY, KA
    [J]. JOURNAL OF MATERIALS SCIENCE, 1988, 23 (11) : 4071 - 4075
  • [45] NUCLEAR MAGNETIC-RESONANCE IN IB-III-VI2 SEMICONDUCTORS
    SPIESS, HW
    HAEBERLEN, U
    BRANDT, G
    RAUBER, A
    SCHNEIDER, J
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1974, 62 (01): : 183 - 192
  • [46] ELECTRONIC-STRUCTURE OF SOME I-III-VI2 CHALCOPYRITE SEMICONDUCTORS STUDIED BY SYNCHROTRON RADIATION
    TAKARABE, K
    KAWAI, K
    MINOMURA, S
    IRIE, T
    TANIGUCHI, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (01) : 441 - 447
  • [47] BAND-GAP AND STRUCTURAL PARAMETER VARIATION OF CUINSE2(1-X)S2X SOLID-SOLUTION IN THE FORM OF THIN-FILMS
    TEMBHURKAR, YD
    HIRDE, JP
    [J]. BULLETIN OF MATERIALS SCIENCE, 1992, 15 (02) : 143 - 148
  • [48] TOMLINSON RD, 1989, 9TH P EC PHOT SOL EN, P149
  • [49] CHEMICAL AND STRUCTURAL CHARACTERIZATION OF PHYSICAL-VAPOR DEPOSITED CUINSE2 FOR SOLAR-CELL APPLICATIONS
    TSENG, BH
    ROCKETT, A
    LOMMASSON, TC
    YANG, LC
    WERT, CA
    THORNTON, JA
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) : 2637 - 2642
  • [50] STRUCTURE, CHEMISTRY, AND GROWTH MECHANISMS OF PHOTOVOLTAIC QUALITY THIN-FILM CU(IN,GA)SE-2 GROWN FROM A MIXED-PHASE PRECURSOR
    TUTTLE, JR
    CONTRERAS, M
    BODE, MH
    NILES, D
    ALBIN, DS
    MATSON, R
    GABOR, AM
    TENNANT, A
    DUDA, A
    NOUFI, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (01) : 153 - 161