Molecular beam epitaxial growth of ZnSe films on vicinal GaAs(110) substrates

被引：3

作者：

Maehashi, K ^{[1
]}

Morota, N ^{[1
]}

Murase, Y ^{[1
]}

Nakashima, H ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 3A期

关键词：

ZnSe films; vicinal GaAs(110) substrates; molecular beam epitaxy; reflection high-energy electron diffraction; atomic force microscopy; photoluminescence;

D O I：

10.1143/JJAP.38.1339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated ZnSe epitaxial layers grown by molecular beam epitaxy on vicinal GaAs(110) substrates using reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and photoluminescence (PL). ZnSe films on vicinal GaAs(110) surfaces misoriented 6 degrees toward (111)A show poor crystal qualify and rough surface morphology with (111) facets. On the other hand, RHEED and AFM observations reveal that ZnSe growth proceeds in a layer-by-layer fashion on vicinal GaAs(110) surfaces misoriented 6 degrees toward (11(1) over bar)B and that the surfaces consist of regular arrays of monoatomic steps. The PL spectra are dominated by the near-band-edge emission.

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页码：1339 / 1342

页数：4

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