Ferroelectric properties of Pb(Zr,Ti)O3 thin films prepared by low-temperature MOCVD using PbTiO3 seeds

被引：22

作者：

Shimizu, M ^{[1
]}

Okaniwa, M ^{[1
]}

Fujisawa, H ^{[1
]}

Niu, H ^{[1
]}

机构：

[1] Himeji Inst Technol, Grad Sch Engn, Dept Elect Engn & Comp Sci, Himeji, Hyogo 6712201, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2004年 / 24卷 / 06期

基金：

日本学术振兴会;

关键词：

ferroelectric properties; films; MOCVD; perovskites; PZT;

D O I：

10.1016/S0955-2219(03)00451-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-temperature metalorganic chemical vapor deposition (MOCVD) of Pb(Zr,Ti)O-3 (PZT) thin films, as low as 370 degreesC, was successfully achieved. Influence of the crystalline nature of PbTiO3 seeds on crystalline and ferroelectric properties of PZT thin films were investigated. The orientation of PZT thin films and its degree were strongly influenced by those of PbTiO3 seeds. PbTiO3 seeds were very useful to decrease growth temperature of PZT films. The PZT film was successfully obtained at 370 degreesC only when PbTiO3 seeds were used, exhibiting remanent polarization (2P(r)) of 4.2 muC/cm(2) and coercive field (2E(c)) of 63 kV/cm. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1625 / 1628

页数：4

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