Crystalline and ferroelectric properties of Pb(Zr, Ti)O3 thin films grown by low-temperature metalorganic chemical vapor deposition

被引：20

作者：

Shimizu, M ^{[1
]}

Okaniwa, M ^{[1
]}

Fujisawa, H ^{[1
]}

Niu, H ^{[1
]}

机构：

[1] Himeji Inst Technol, Grad Sch Engn, Dept Elect Elect & Computer Engn, Himeji, Hyogo 6712201, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 11B期

关键词：

Pb(Zr; Ti)O-3; thin films; PbTiO3; seed; MOCVD; low-temperature growth; ferroelectric properties; remanent polarization; coercive field;

D O I：

10.1143/JJAP.41.6686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature growth of Pb(Zr, Ti)O-3 (PZT) thin films, as low as 390degreesC, by metalorganic chemical vapor deposition (MOCVD) using PbTiO3 seeds was successfully achieved. Influence of the crystalline nature of PbTiO3 seeds on crystalline and ferroelectric properties of the PZT thin films were investigated. The orientation of PZT films and its degree were strongly influenced by those of PbTiO3 seeds. PZT thin films grown at 390degreesC showed higher orientation as the deposition temperatures of the seeds increased from 380 to 450degreesC. PZT thin films grown with the 380-450degreesC-deposited seeds showed remanent polarization (2 P-r) of 6.9-15.9 muC/cm(2) and coercive field (2E(c)) of 93-162 kV/cm. Crystalline and ferroelectric properties of PZT films with and without seeds were also investigated.

引用

页码：6686 / 6689

页数：4

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