Integrated optics in silicon and SiGe-heterostructures

被引：57

作者：

Schuppert, B

Schmidtchen, J

Splett, A

Fischer, U

Zinke, T

Moosburger, R

Petermann, K

机构：

[1] Technische Universität Berlin, Fachgebiet Hochfrequenztechnik, D-10587 Berlin

[2] Technische Universität Berlin, Berlin

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1996年 / 14卷 / 10期

关键词：

D O I：

10.1109/50.541223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews various techniques and ideas in the field of integrated optics in silicon, mainly focused on silicon in conjunction with germanium, We will discuss different approaches for waveguides, passive and active components in silicon as well as recent developments in the fabrication and performance of such components, For waveguides in silicon, the characteristics such as losses and spot-sizes will be given, showing that silicon could be an attractive candidate for integrated optical devices.

引用

页码：2311 / 2323

页数：13

共 58 条

[41] OPTICAL WAVE-GUIDING IN A SINGLE-CRYSTAL LAYER OF GERMANIUM-SILICON GROWN ON SILICON [J].