Design of thermally stable gate metallizations for AlGaAsSb/InAsHEMTs

被引：3

作者：

Wang, SH ^{[1
]}

Mohney, SE ^{[1
]}

Robinson, JA ^{[1
]}

机构：

[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 08期

关键词：

D O I：

10.1088/0268-1242/20/8/018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal stability of various gate metallizations on AlGaAsSb/InAs, with and without an InAs cap, was investigated. A W/Au gate metallization was found to be a good candidate for stable gate metallizations directly on AlGaAsSb. Ti/Pt/Au (30/40/80 nm) and Co/Si/Co/Si/Co gates are thermally stable on InAs. Cross-sectional transmission electron microscopy showed that degradation in the current-voltage characteristics of aged samples is associated with metal/InAs reactions.

引用

页码：755 / 760

页数：6

共 14 条

[1] Energy bandgap of AlxGa1-xAs1-ySby and conduction band discontinuity of AlxGa1-xAs1-ySby/InAs and AlxGa1-xAs1-ySby/InGaAs heterostructures [J].

Anwar, AFM ;

Webster, RT .

SOLID-STATE ELECTRONICS, 1998, 42 (11) :2101-2104

[2]

BAKER H, 1992, ASM HDB ALLOY PHASE, P243

[3] Gate metallurgy effects in InAs/AlSb HFETs: Preliminary results and demonstration of surface Fermi level shifts [J].

Bolognesi, CR ;

Dvorak, MW ;

Chow, DH .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (08) :L54-L57

[4]

BOLOGNESI CR, 1993, THESIS U CALIFORNIA

[5] Ohmic contacts in AlSb InAs high electron mobility transistors for low-voltage operation [J].

Boos, JB ;

Bennett, BR ;

Kruppa, W ;

Park, D ;

Mittereder, J ;

Bass, R ;

Twigg, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1022-1027

[6] AlSb/InAs HEMTs with a TiW/Au gate metalization for improved stability [J].

Boos, JB ;

Bennett, BR ;

Kruppa, W ;

Park, D ;

Mittereder, J ;

Chang, W ;

Turner, NH .

SOLID-STATE ELECTRONICS, 2003, 47 (02) :181-184

[7] Hole transport across the (Al,Ga)(As,Sb) barrier in InAs-(Al,Ga)(As,Sb) heterostructures [J].

Brar, B ;

Kroemer, H .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :894-899

[8]

KLINGBEIL J, 1992, J PHASE EQUILIB, V13, P522

[9]

Liu W., UNPUB

[10] AlGaAsSb buffer barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability [J].

Miya, S ;

Muramatsu, S ;

Kuze, N ;

Nagase, K ;

Iwabuchi, T ;

Ichii, A ;

Ozaki, M ;

Shibasaki, I .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) :415-420

← 1 2 →