Energy bandgap of AlxGa1-xAs1-ySby and conduction band discontinuity of AlxGa1-xAs1-ySby/InAs and AlxGa1-xAs1-ySby/InGaAs heterostructures

被引：15

作者：

Anwar, AFM ^{[1
]}

Webster, RT

机构：

[1] Univ Connecticut, Dept Elect & Syst Engn, Storrs, CT 06269 USA

[2] USAF, Res Lab, Div Electromagnet Technol, Sensors Directorate, Hanscom AFB, MA 01731 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(98)00157-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A technique to determine the conduction band discontinuity in any heterostructure and the resulting band alignment is presented. Energy bandgaps of the quaternary AlGaAsSb and conduction band discontinuity for lattice matched AlxGa1-xAs1-ySby/InAs, AlxGa1-xAs1-ySby/In0.8Ga0.2As and AlxGa1-xAs1-ySby/In0.52Ga0.48As heterostructures are reported for varying Al and Sb mole fractions to demonstrate the method. AlxGa1-xAs1-ySby/InAs changes from a type-II broken-gap alignment to type-ii staggered alignment near an Al mole fraction of 0.15 followed by a change from type II to type-I near an Al mole fraction of 0.9. No type-II broken-band alignments are observed in the other two lattice matched systems. The minimum Al mole fraction required for type-I band alignment increases with increasing In mole fraction. It is shown that the quaternary bandgap becomes indirect for Al mole fractions greater than approximately 0.4 and the conduction band discontinuity is a linear function of the Al mole fraction for the lattice-matched systems. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：2101 / 2104

页数：4

共 11 条

[1] BAND-GAPS AND REFRACTIVE-INDEXES OF ALGAASSB, GAINASSB, AND INPASSB - KEY PROPERTIES FOR A VARIETY OF THE 2-4-MU-M OPTOELECTRONIC DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4869-4876

[2] On the possible effects of AlGaAsSb growth parameters on the 2-DEG concentration in AlGaAsSb/InGaAs/AlGaAsSb QW's [J].

Anwar, AFM ;

Webster, RT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) :1170-1175

[3] ENERGY BANDGAP AND LATTICE-CONSTANT CONTOURS OF III-V QUATERNARY ALLOYS [J].

GLISSON, TH ;

HAUSER, JR ;

LITTLEJOHN, MA ;

WILLIAMS, CK .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) :1-16

[4] GALLIUM ANTIMONIDE DEVICE RELATED PROPERTIES [J].

MILNES, AG ;

POLYAKOV, AY .

SOLID-STATE ELECTRONICS, 1993, 36 (06) :803-818

[5] AlGaAsSb buffer barrier on GaAs substrate for InAs channel devices with high electron mobility and practical reliability [J].

Miya, S ;

Muramatsu, S ;

Kuze, N ;

Nagase, K ;

Iwabuchi, T ;

Ichii, A ;

Ozaki, M ;

Shibasaki, I .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (03) :415-420

[6] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J].

MOON, RL ;

ANTYPAS, GA ;

JAMES, LW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) :635-644

[7] BAND-EDGE ALIGNMENT IN HETEROSTRUCTURES [J].

SCHUERMEYER, FL ;

COOK, P ;

MARTINEZ, E ;

TANTILLO, J .

APPLIED PHYSICS LETTERS, 1989, 55 (18) :1877-1878

[8]

SVENSSON SP, IN PRESS J APPL PHYS

[9] EFFECT OF GROWTH SEQUENCE ON THE BAND DISCONTINUITIES AT ALAS/GAAS (100) AND (110) HETEROJUNCTION INTERFACES [J].

WALDROP, JR ;

GRANT, RW ;

KRAUT, EA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1209-1214

[10] AN INAS CHANNEL HETEROJUNCTION FIELD-EFFECT TRANSISTOR WITH HIGH TRANSCONDUCTANCE [J].

YOH, KJ ;

MORIUCHI, T ;

INOUE, M .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :526-528

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