Improved insight in charge trapping of high-k ZrO2/SiO2 stacks by use of tunneling atomic force microscopy

被引：25

作者：

Paskaleva, A. ^{[1
]}

Yanev, V. ^{[2
]}

Rommel, M. ^{[2
]}

Lemberger, M. ^{[2
]}

Bauer, A. J. ^{[2
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

[2] Fraunhofer Inst Integrated Syst & Device Technol, D-91058 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 02期

关键词：

D O I：

10.1063/1.2957072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, tunneling atomic force microscopy (TUNA) is used to describe the charge trapping in high-k ZrO2 dielectric stacks at nanoscale dimensions by analyzing the alteration of the I-V curves and the I-V hysteresis phenomena with repeated measurements (up to 100 curves) at a single spot of only several nm(2) in area. TUNA is also suggested as a powerful technique to correlate the electrical characteristics to the physical properties of the stacks. In particular, the influence of the thin SiO2 interfacial layer thickness and its modification with annealing conditions on the electrical properties is demonstrated. Furthermore, the appearance of an I-V hysteresis and its relation to degradation mechanisms in high-k dielectric stacks are explained. Trapping at pre-existing traps is evidenced. (c) 2008 American Institute of Physics.

引用

页数：7

共 22 条

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