0.6 WCWGaInNAsvertical external-cavity surface emitting laser operating at 1.32 μm

被引：127

作者：

Hopkins, JM ^{[1
]}

Smith, SA

Jeon, CW

Sun, HD

Burns, D

Calvez, S

Dawson, MD

Jouhti, T

Pessa, M

机构：

[1] Univ Strathclyde, Inst Photon, Glasgow G4 0NW, Lanark, Scotland

[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 01期

关键词：

D O I：

10.1049/el:20040049

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

What is believed to be the first high-power vertical external cavity surface emitting laser (VECSEL) operating at 1.3 pin is reported. CW output powers >0.6 W were achieved using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a single-crystal diamond heatspreader.

引用

页码：30 / 31

页数：2

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