High etch rates of SiC in magnetron enhanced SF6 plasmas

被引：36

作者：

McLane, GF

Flemish, JR

机构：

[1] U.S. Army Research Laboratory, Fort Monmouth

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 26期

关键词：

D O I：

10.1063/1.115996

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetron enhanced reactive ion etching of SIC has been investigated in SF6 plasmas. Etch rate was determined as a function of cathode power density (0.1-0.5 W/cm(2)), pressure (1-5 mTorr), and flow rate (5-15 sccm). The highest SIC etch rates yet reported (450 nm/min) were achieved, at low cathode bias voltage (100 V). Anisotropic etch profiles were obtained with smooth etch surfaces free of micromasking. Addition of O-2 to the SF6 feed gas did not increase the etch rate.

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页码：3755 / 3757

页数：3

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