Super low density InGaAs semiconductor ring-shaped nanostructures

被引：50

作者：

Lee, Jihoon H. ^{[1
]}

Wang, Zhiming M. ^{[1
]}

Ware, Morgan E. ^{[1
]}

Wijesundara, Kushal C. ^{[2
]}

Garrido, Mauricio ^{[2
]}

Stinaff, Eric A. ^{[2
]}

Salamo, Gregory J. ^{[1
]}

机构：

[1] Univ Arkansas, Inst Nanoscale Sci & Engn, Fayetteville, AR 72701 USA

[2] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA

来源：

CRYSTAL GROWTH & DESIGN | 2008年 / 8卷 / 06期

关键词：

D O I：

10.1021/cg701263c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we demonstrate densities down to 2.3 x 10(6) cm(-2) with only self-assembled methods based on droplet epitaxy. This is several orders of magnitude lower than conventional nanostructures. The formation of these ring-shaped nanostructures is driven by a self-assembled indium nanodrilling mechanism and diffusion during crystallization.

引用

页码：1945 / 1951

页数：7

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