Customized nanostructures MBE growth:: from quantum dots to quantum rings

被引：17

作者：

Granados, D ^{[1
]}

García, JM ^{[1
]}

机构：

[1] IMM, CSIC, CNM, Madrid 28760, Spain

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

nanostructures; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(02)02512-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

When self-assembled InAs/GaAs(0 0 1) quantum dots (QD) are overgrown by a thin (2 nm) GaAs cap under different growth conditions, morphological changes occur. The effects of growth conditions on the final structural properties are analyzed by atomic force microscopy. Under As-4, thin cap deposition at similar to 540degreesC produces elongated dash-like nanostructures, whereas at 500degreesC two humps are obtained from each QD. When As-2 is used and the thin cap is deposited at 500degreesC, quantum rings are obtained. Ensemble photoluminescence (PL) spectroscopy and polarization PL at 15 K show drastic changes on confinement properties. Shape control results in PL emission tuning from 1110 nm (dots) to 920 nm (rings). (C) 2003 Elsevier Science B.V. All rights reserved.

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页码：213 / 217

页数：5

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