Low-temperature STM on InAs(110) accumulation surfaces

被引：16

作者：

Canali, L

Wildoer, JWG

Kerkhof, O

Kouwenhoven, LP

机构：

[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands

[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of InAs(110) surfaces have been investigated by means of low-temperature scanning tunneling microscopy and spectroscopy. A technique for ex-situ sulphur passivation has been developed to form an accumulation layer on such a surface. Tunneling spectroscopy at 4.2 K shows the presence of 2D subbands in the accumulation layer. Measurements in high magnetic field demonstrate Landau quantization of the energy spectrum, both in the 2D subbands and in the 3D bulk conduction band.

引用

收藏

页码：S113 / S116

页数：4

相关论文

共 13 条

[1] ELECTROSTATICS OF EDGE CHANNELS [J].

CHKLOVSKII, DB ;

SHKLOVSKII, BI ;

GLAZMAN, LI .

PHYSICAL REVIEW B, 1992, 46 (07) :4026-4034

[2] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].

FEENSTRA, RM .

PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570

[3] DIRECT MAPPING OF ELECTRONIC-STRUCTURE ACROSS AL0.3GA0.7AS/GAAS HETEROJUNCTIONS - BAND OFFSETS, ASYMMETRICAL TRANSITION WIDTHS, AND MULTIPLE-VALLEY BAND STRUCTURES [J].

GWO, S ;

CHAO, KJ ;

SHIH, CK ;

SADRA, K ;

STREETMAN, BG .

PHYSICAL REVIEW LETTERS, 1993, 71 (12) :1883-1886

[4] A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment [J].

Lu, ED ;

Zhang, FP ;

Xu, SH ;

Yu, XJ ;

Xu, PS ;

Han, ZF ;

Xu, FQ ;

Zhang, XY .

APPLIED PHYSICS LETTERS, 1996, 69 (15) :2282-2284

[5] A MODEL TO EXPLAIN THE EFFECTIVE PASSIVATION OF THE GAAS SURFACE BY (NH4)2SX TREATMENT [J].

NANNICHI, Y ;

FAN, JF ;

OIGAWA, H ;

KOMA, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12) :L2367-L2369

[6] MAGNETOCONDUCTANCE STUDY OF ACCUMULATION LAYERS ON N-INAS [J].

REISINGER, H ;

SCHABER, H ;

DOEZEMA, RE .

PHYSICAL REVIEW B, 1981, 24 (10) :5960-5969

[7] ELECTRON-TUNNELING STUDIES OF A QUANTIZED SURFACE ACCUMULATION LAYER [J].

TSUI, DC .

PHYSICAL REVIEW B, 1971, 4 (12) :4438-&

[8] OBSERVATION OF SURFACE BOUND STATE AND 2-DIMENSIONAL ENERGY BAND BY ELECTRON TUNNELING [J].

TSUI, DC .

PHYSICAL REVIEW LETTERS, 1970, 24 (07) :303-&

[9] IMAGING OF EDGE CHANNELS IN THE INTEGER QUANTUM HALL REGIME BY THE LATERAL PHOTOELECTRIC EFFECT [J].

VANHAREN, RJF ;

DELANGE, W ;

BLOM, FAP ;

WOLTER, JH .

PHYSICAL REVIEW B, 1995, 52 (08) :5760-5766

[10]

Weisbuch C., 1991, QUANTUM SEMICONDUCTO, P19