A sulfur passivation for GaAs surface by an organic molecular, CH3CSNH2 treatment

被引：46

作者：

Lu, ED

Zhang, FP

Xu, SH

Yu, XJ

Xu, PS

Han, ZF

Xu, FQ

Zhang, XY

机构：

[1] Natl. Synchrt. Radiation Laboratory, Univ. of Sci. and Technol. of China, Hefei

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 15期

关键词：

D O I：

10.1063/1.117534

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A sulfur passivation method for GaAs, CH3CSNH2 treatment has been developed. It is quite effective for removing the surface oxide layer and forming the sulfide passivation layer on GaAs surface. The enhancements of the PL intensity reveal the reduction of the surface recombination velocity and the reduction of density of defect states by this treatment. The synchrotron radiation photoemission spectroscopy measurements show that sulfur atoms bond both Ga and As atoms. After being annealed, a stable sulfur passivation layer is terminated on the surface due to the As2S3 component react with GaAs into the GaS component. (C) 1996 American Institute of Physics.

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页码：2282 / 2284

页数：3

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