A MILD ELECTROCHEMICAL SULFUR PASSIVATION METHOD FOR GAAS(100) SURFACES

被引：26

作者：

LI, ZS ^{[1
]}

HOU, XY ^{[1
]}

CAL, WZ ^{[1
]}

WANG, W ^{[1
]}

DING, XM ^{[1
]}

WANG, X ^{[1
]}

机构：

[1] FUDAN UNIV,FUDAN TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.360074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a mild electrochemical sulfurization technique which can form a very thick sulfide layer on GaAs(100) surface. This sulfide layer is quite stable in air. The photoluminescence spectrum of such anodic sulfurized GaAs surface shows a large intensity enhancement as compared with that of as-etched GaAs samples. No visual intensity decay occurs under the laser beam illumination after the sample has been maintained in air for more than seven months. The structure and composition of the passivation layers are investigated by x-ray photoelectron spectroscopy and the mechanism of layer formation is discussed. (C) 1995 American Institute of Physics.

引用

页码：2764 / 2766

页数：3

共 9 条

[1] EFFECTS OF NA2S AND (NH4)2S EDGE PASSIVATION TREATMENTS ON THE DARK CURRENT-VOLTAGE CHARACTERISTICS OF GAASPN DIODES [J].

CARPENTER, MS ;

MELLOCH, MR ;

LUNDSTROM, MS ;

TOBIN, SP .

APPLIED PHYSICS LETTERS, 1988, 52 (25) :2157-2159

[2] SCHOTTKY-BARRIER FORMATION ON (NH4)2S-TREATED N-TYPE AND P-TYPE (100)GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

DUNGAN, TE .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :66-68

[3] INVESTIGATIONS OF AMMONIUM SULFIDE SURFACE TREATMENTS ON GAAS [J].

CARPENTER, MS ;

MELLOCH, MR ;

COWANS, BA ;

DARDAS, Z ;

DELGASS, WN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :845-850

[4] METAL-DEPENDENT SCHOTTKY-BARRIER HEIGHT WITH THE (NH4)2SX-TREATED GAAS [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11) :L2125-L2127

[5] ELECTROCHEMICAL SULFUR PASSIVATION OF GAAS [J].

HOU, XY ;

CAI, WZ ;

HE, ZQ ;

HAO, PH ;

LI, ZS ;

DING, XM ;

WANG, X .

APPLIED PHYSICS LETTERS, 1992, 60 (18) :2252-2254

[6] ENHANCEMENT OF PHOTOLUMINESCENCE INTENSITY OF GAAS WITH CUBIC GAS CHEMICAL VAPOR-DEPOSITED USING A STRUCTURALLY DESIGNED SINGLE-SOURCE PRECURSOR [J].

MACINNES, AN ;

POWER, MB ;

BARRON, AR ;

JENKINS, PP ;

HEPP, AF .

APPLIED PHYSICS LETTERS, 1993, 62 (07) :711-713

[7] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[8] EFFECTS OF PASSIVATING IONIC FILMS ON THE PHOTOLUMINESCENCE PROPERTIES OF GAAS [J].

SKROMME, BJ ;

SANDROFF, CJ ;

YABLONOVITCH, E ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1987, 51 (24) :2022-2024

[9]

SPINDT CJ, 1990, 12TH P STAT ART PROG, P3

← 1 →