PASSIVATION OF GAAS (100) USING SELENIUM SULFIDE

The chemical and electronic aspects of a Ga-As (100) surface passivated by selenium sulfide (SeS2) have been investigated by x-ray photoelectron spectroscopy and photoluminescence. It has been observed that this treatment gives rise to an arsenic selenide (As2Se3) terminated surface. No S-GaAs bonds were observed. The remarkable electronic properties and the formation of the chemically and thermally stable As2Se3 phase reveals the successful passivation. Passivation of GaAs in single step and identification of a single selenium species on the surface are considered to be the major advantages of using SeS2.