Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

被引：46

作者：

Chang, Kuan-Chang ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Syu, Yong-En ^{[3
]}

Wang, Chia-C. ^{[4
]}

Chuang, Siang-Lan ^{[1
]}

Li, Cheng-Hua ^{[1
]}

Gan, Der-Shin ^{[1
]}

Sze, Simon M. ^{[2
,5
,6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Chem, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[6] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 26期

关键词：

Fourier transform spectra; infrared spectra; nickel; power consumption; random-access storage; silicon compounds; X-ray photoelectron spectra;

D O I：

10.1063/1.3671991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]

引用

页数：4

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