Optimal control of rapid thermal annealing in a semiconductor process

被引：23

作者：

Gunawan, R ^{[1
]}

Jung, MYL ^{[1
]}

Seebauer, EG ^{[1
]}

Braatz, RD ^{[1
]}

机构：

[1] Univ Illinois, Dept Chem & Biomol Engn, Urbana, IL 61801 USA

来源：

JOURNAL OF PROCESS CONTROL | 2004年 / 14卷 / 04期

关键词：

optimal control; batch control; uncertainty analysis; robustness analysis; microelectronics processes; semiconductor processing; rapid thermal annealing;

D O I：

10.1016/j.jprocont.2003.07.005

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study focuses on the optimal control of rapid thermal annealing (RTA) used in the formation of ultrashallow junctions needed in next-generation microelectronic devices. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control implementations for these processes. This is the first time that the effects of model uncertainties and control implementation inaccuracies are rigorously quantified for RTA. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：423 / 430

页数：8

共 47 条

[1] Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions [J].

Agarwal, A ;

Gossmann, HJ ;

Fiory, AT .

JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) :1333-1339

[2]

Agarwal A, 2000, 2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, P293, DOI 10.1109/IIT.2000.924147

[3] Ultra-shallow junctions by ion implantation and rapid thermal annealing: Spike-anneals, ramp rate effects [J].

Agarwal, A ;

Gossmann, HJ ;

Fiory, AT .

SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 :19-30

[4] Atomic-scale characterization of boron diffusion in silicon [J].

Alippi, P ;

Colombo, L ;

Ruggerone, P ;

Sieck, A ;

Seifert, G ;

Frauenheim, T .

PHYSICAL REVIEW B, 2001, 64 (07) :752071-752074

[5] Energetics and diffusivity of atomic boron in silicon by density-functional-based tight-binding simulations [J].

Alippi, P ;

Colombo, L ;

Ruggerone, P .

COMPUTATIONAL MATERIALS SCIENCE, 2001, 22 (1-2) :44-48

[6]

BALAS GJ, 2001, MUANALYSIS SYNTHESIS

[7] TRANSIENT SIMULATION OF SILICON DEVICES AND CIRCUITS [J].

BANK, RE ;

COUGHRAN, WM ;

FICHTNER, W ;

GROSSE, EH ;

ROSE, DJ ;

SMITH, RK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (10) :1992-2007

[8] The fraction of substitutional boron in silicon during ion implantation and thermal annealing [J].

Caturla, MJ ;

Johnson, MD ;

de la Rubia, TD .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2736-2738

[9] Cluster formation during annealing of ultra-low-energy boron-implanted silicon [J].

Collart, EJH ;

Murrell, AJ ;

Foad, MA ;

van den Berg, JA ;

Zhang, S ;

Armour, D ;

Goldberg, RD ;

Wang, TS ;

Cullis, AG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01) :435-439

[10] EXPERIMENTS ON ATOMIC-SCALE MECHANISMS OF DIFFUSION [J].

COWERN, NEB ;

VANDEWALLE, GFA ;

GRAVESTEIJN, DJ ;

VRIEZEMA, CJ .

PHYSICAL REVIEW LETTERS, 1991, 67 (02) :212-215

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