Isotope effects on the optical spectra of semiconductors

被引:373
作者
Cardona, M
Thewalt, MLW
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
关键词
D O I
10.1103/RevModPhys.77.1173
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Since the end of the cold war, macroscopic amounts of separated stable isotopes of most elements have been available "off the shelf" at affordable prices. Using these materials, single crystals of many semiconductors have been grown and the dependence of their physical properties on isotopic composition has been investigated. The most conspicuous effects observed have to do with the dependence of phonon frequencies and linewidths on isotopic composition. These affect the electronic properties of solids through the mechanism of electron-phonon interaction, in particular, in the corresponding optical excitation spectra and energy gaps. This review contains a brief introduction to the history, availability, and characterization of stable isotopes, including their many applications in science and technology. It is followed by a concise discussion of the effects of isotopic composition on the vibrational spectra, including the influence of average isotopic masses and isotopic disorder on the phonons. The final sections deal with the effects of electron-phonon interaction on energy gaps, the concomitant effects on the luminescence spectra of free and bound excitons, with particular emphasis on silicon, and the effects of isotopic composition of the host material on the optical transitions between the bound states of hydrogenic impurities.
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收藏
页码:1173 / 1224
页数:52
相关论文
共 237 条
[161]  
Pomeranchuk I, 1942, J PHYS-USSR, V6, P237
[162]   SPECTROSCOPY OF THE SOLID-STATE ANALOGS OF THE HYDROGEN-ATOM - DONORS AND ACCEPTORS IN SEMICONDUCTORS [J].
RAMDAS, AK ;
RODRIGUEZ, S .
REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (12) :1297-1387
[163]   Thermal expansion, molar volume and specific heat of diamond from 0 to 3000K [J].
Reeber, RR ;
Wang, K .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (01) :63-67
[164]   Isotope effects on the electronic critical points of germanium:: Ellipsometric investigation of the E1 and E1+Δ1 transitions [J].
Ronnow, D ;
Lastras-Martinez, LF ;
Cardona, M .
EUROPEAN PHYSICAL JOURNAL B, 1998, 5 (01) :29-35
[165]   LATTICE-DYNAMICS OF CADMIUM TELLURIDE [J].
ROWE, JM ;
NICKLOW, RM ;
PRICE, DL ;
ZANIO, K .
PHYSICAL REVIEW B, 1974, 10 (02) :671-675
[166]   Thermal conductivity of isotopically enriched silicon [J].
Ruf, T ;
Henn, RW ;
Asen-Palmer, M ;
Gmelin, E ;
Cardona, M ;
Pohl, HJ ;
Devyatych, GG ;
Sennikov, PG .
SOLID STATE COMMUNICATIONS, 2000, 115 (05) :243-247
[167]  
Ruf T, 2001, SPRINGER PROC PHYS, V87, P1531
[168]   Temperature dependence of the refractive index of diamond up to 925 K [J].
Ruf, T ;
Cardona, M ;
Pickles, CSJ ;
Sussmann, R .
PHYSICAL REVIEW B, 2000, 62 (24) :16578-16581
[169]   Phonon dispersion curves in wurtzite-structure GaN determined by inelastic x-ray scattering [J].
Ruf, T ;
Serrano, J ;
Cardona, M ;
Pavone, P ;
Pabst, M ;
Krisch, M ;
D'Astuto, M ;
Suski, T ;
Grzegory, I ;
Leszczynski, M .
PHYSICAL REVIEW LETTERS, 2001, 86 (05) :906-909
[170]   Line shape of the no-phonon luminescence of excitons bound to phosphorus in carbon-doped silicon [J].
Safonov, AN ;
Davies, G ;
Lightowlers, EC .
PHYSICAL REVIEW B, 1996, 54 (07) :4409-4412