Violet and UV light-emitting diodes grown on ZrB2 substrate

被引：16

作者：

Kamiyama, S ^{[1
]}

Takanami, S

Tomida, Y

Iida, K

Kawashima, T

Fukui, S

Iwaya, M

Kinoshita, H

Matsuda, T

Yasuda, T

Otani, S

Amano, H

Akasaki, I

机构：

[1] Meijo Univ, Fac Sci & Technol, Tenpaku Ku, Nagoya, Aichi 4688502, Japan

[2] Kyocera Corp, Cent Res Lab, Kyoto 6190237, Japan

[3] Natl Inst Mat Sci, Tsukuba, Ibaraki 3058555, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 200卷 / 01期

关键词：

D O I：

10.1002/pssa.200303317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using the two-step metalorganic vapor phase epitaxial growth on ZrB2 substrate, we demonstrate violet and UV light-emitting diodes (LEDs). The violet LED shows extremely linear L-I characteristics and a sharp single spectrum with a peak wavelength of 410 nm. In the UV-LED on ZrB2, we confirmed that the vertical conduction through the ZrB2/AlGaN interface is superior to the conventional lateral conduction. The use of ZrB2 substrate is promising for UV light emitting devices with low operating voltage. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：67 / 70

页数：4

共 11 条

[1]

AKASAKI I, 1995, JPN J APPL PHYS 2, V34, P1517

[2]

Akasaki I, 1992, I PHYS C SER, V129, P851

[3] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].