Spatial control of InGaN luminescence by MOCVD selective epitaxy

Selective epitaxial growth of InGaN alloys was performed by metalorganic chemical vapor deposition (MOCVD). Templates consisted of arrays of circular etched holes in a SiO2 mask layer, with pre-grown GaN hexagonal pyramid structures. The room temperature (300 K) photoluminescence (PL) peak wavelength increased with increasing mask-opening spacing for a constant mask-opening diameter. For 5 mu m diameter pyramids, peak PL wavelengths ranged from 457 to 505 nm for mask opening spacings of 6 to 13 mu m, compared to PL peak wavelength of 420 nm for a planar reference sample. (C) 1998 Elsevier Science B.V. All rights reserved.