Fabrication of patterned magnetic nanodots by laser interference lithography

被引：56

作者：

Murillo, R ^{[1
]}

van Wolferen, HA ^{[1
]}

Abelmann, L ^{[1
]}

Lodder, JC ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, SMI, NL-7500 AE Enschede, Netherlands

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 78-79卷

关键词：

patterned media; nanodots; magnetic dots; laser interference lithography;

D O I：

10.1016/j.mee.2005.01.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifications in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supraexposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m. (c) 2005 Published by Elsevier B.V.

引用

页码：260 / 265

页数：6

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