Synthesis of Nitrogen-Doped Graphene on Pt(111) by Chemical Vapor Deposition

被引:97
作者
Imamura, Gaku [1 ]
Saiki, Koichiro [1 ,2 ]
机构
[1] Univ Tokyo, Dept Chem, Chiba 2778561, Japan
[2] Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan
关键词
GRAPHITE; NANOGRAPHITE; PYRIDINE; NITRIDE; FILMS;
D O I
10.1021/jp202128f
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chemical doping of graphene with foreign atoms is one of the most promising ways to modify the electronic structure of graphene. We fabricated nitrogen (N)-doped graphene on a Pt(111) surface through a chemical vapor deposition method; the heated substrate was exposed to such N-containing organic molecules as pyridine and acrylonitrile. Analysis by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy revealed that N-doped graphene was formed on a Pt(111) surface from pyridine at the substrate temperature (T-S) higher than 500 degrees C, while nitrogen was not doped at T-S higher than 700 degrees C. Exposing the heated substrate to acrylonitrile also led to formation of graphene but nitrogen was not incorporated at any T-S. On the basis of the experimental results, we discuss the growth mechanisms of N-doped graphene at low and high T-S.
引用
收藏
页码:10000 / 10005
页数:6
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