Thermal stability of blue emission from porous beta-SiC formed on crystalline Si by C+ implantation

被引：5

作者：

Liao, LS ^{[1
]}

Bao, XM ^{[1
]}

Min, NB ^{[1
]}

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,JIANGSU,PEOPLES R CHINA

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1996年 / 155卷 / 01期

关键词：

D O I：

10.1002/pssa.2211550123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous beta-SiC on Si substrates was prepared by carbon ion implantation into Si crystal wafers with a dose of 5 x 10(17) cm(-2) at an energy of 50 keV followed by thermal annealing and electrochemical anodization. Compared with common porous Si, the Si-based porous beta-SiC does not only exhibit blue emission but also has good thermal stability when oxidized up to 850 degrees C for 30 min. This PL stability is due to the thermal stability of Si-C bonds in porous beta-SiC.

引用

页码：233 / 238

页数：6

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