CORRELATION OF OPTICAL AND STRUCTURAL-PROPERTIES OF POROUS BETA-SIC FORMED ON SILICON BY C+-IMPLANTATION

被引：16

作者：

LIAO, LS ^{[1
]}

BAO, XM ^{[1
]}

LI, NS ^{[1
]}

YANG, ZF ^{[1
]}

MIN, NB ^{[1
]}

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1995年 / 95卷 / 08期

关键词：

NANOSTRUCTURES; NANOFABRICATIONS; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; OPTICAL PROPERTIES;

D O I：

10.1016/0038-1098(95)00241-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Carbon ions were implanted into silicon crystal wafers with doses of 10(14)-10(17) cm(-2) at an energy of 50 KeV followed by thermal annealing and anodization to form porous beta-SiC The photoluminescence (PL) from the porous structures on C+-implanted samples is effected by C+ dose. The samples with C+ dose greater than or equal to 10(15) cm(-2) exhibit blue emission at room temperature. The PL intensity is stronger than that of common porous silicon and increases as C+ dose increases. The transmission electron microscope observation suggests that the quantum confinement effect of nanometer beta-SiC be responsible for the blue light emission.

引用

页码：559 / 562

页数：4

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