Luminescent silicon nanoparticles capped by conductive polyaniline through the self-assembly method

被引:93
作者
Li, ZF [1 ]
Swihart, MT [1 ]
Ruckenstein, E [1 ]
机构
[1] SUNY Buffalo, Dept Chem & Biol Engn, Buffalo, NY 14260 USA
关键词
D O I
10.1021/la0358926
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Graft polymerization has been used, for the first time, to prepare a dense conductive polymer coating on free-standing luminescent silicon nanoparticles. The silicon nanoparticles maintained their photoluminescence and crystallinity after surface modification. The nanoparticles were first surface hydroxylated and then reacted with (3-bromopropyl)trichlorosilane to form a dense bromopropylsilane monolayer. This was further reacted with aniline, which displaced the bromine atoms. The surface-bound aniline molecules were then used as active sites for the graft polymerization of polyaniline (PANI). The composition, structure, morphology, and other physical properties of the PANI-capped Si nanoparticles were examined by X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, and transmission electron microscopy. The silane self-assembled monolayer effectively protected the silicon particles against photoluminescence quenching and degradation in basic solutions that rapidly quench the photoluminescence of unprotected particles. The PANI coating further enhanced this protection, even in its nonconducting emeraldine base state. The electrical conductivity of the HCl-doped (emeraldine salt) PANI-capped Si nanocomposite exceeded 10(-2) S/cm, which is 6 orders of magnitude higher than that of the bare Si nanoparticles. However, there was negligible change in the photoluminescence spectrum or lifetime upon addition of the PANI layer, suggesting that the charge carriers responsible for the luminescence remained confined within the Si nanoparticles.
引用
收藏
页码:1963 / 1971
页数:9
相关论文
共 80 条
[41]   Light emitting devices using poly (p-phenylene vinylene)/porous silicon composites [J].
Lakehal, M ;
Nguyen, TP ;
Le Rendu, P ;
Joubert, P ;
Destruel, P .
SYNTHETIC METALS, 2001, 121 (1-3) :1631-1632
[42]   CHEMICAL MODIFICATION OF THE PHOTOLUMINESCENCE QUENCHING OF POROUS SILICON [J].
LAUERHAAS, JM ;
SAILOR, MJ .
SCIENCE, 1993, 261 (5128) :1567-1568
[43]   Photoluminescence of size-separated silicon nanocrystals: Confirmation of quantum confinement [J].
Ledoux, G ;
Gong, J ;
Huisken, F ;
Guillois, O ;
Reynaud, C .
APPLIED PHYSICS LETTERS, 2002, 80 (25) :4834-4836
[44]   PHOTODERIVATIZATION OF THE SURFACE OF LUMINESCENT POROUS SILICON WITH FORMIC-ACID [J].
LEE, EJ ;
HA, JS ;
SAILOR, MJ .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1995, 117 (31) :8295-8296
[45]  
LI X, UNPUB LANGMUIR
[46]   Process for preparing macroscopic quantities of brightly photoluminescent silicon nanoparticles with emission spanning the visible spectrum [J].
Li, XG ;
He, YQ ;
Talukdar, SS ;
Swihart, MT .
LANGMUIR, 2003, 19 (20) :8490-8496
[47]   Patterned conductive polyaniline on Si(100) surface via self-assembly and graft polymerization [J].
Li, ZF ;
Ruckenstein, E .
MACROMOLECULES, 2002, 35 (25) :9506-9512
[48]   Effect of thermal processing conditions on the intrinsic oxidation states and mechanical properties of polyaniline films [J].
Li, ZF ;
Kang, ET ;
Neoh, KG ;
Tan, KL .
SYNTHETIC METALS, 1997, 87 (01) :45-52
[49]   Properties of insulated gate field-effect transistors with a polyaniline gate electrode [J].
Liess, M ;
Chinn, D ;
Petelenz, D ;
Janata, J .
THIN SOLID FILMS, 1996, 286 (1-2) :252-255
[50]   A porous silicon-based optical interferometric biosensor [J].
Lin, VSY ;
Motesharei, K ;
Dancil, KPS ;
Sailor, MJ ;
Ghadiri, MR .
SCIENCE, 1997, 278 (5339) :840-843