Optical emission spectroscopic study of a radio-frequency plasma of Ar+SiH4

被引:23
作者
Das, UK [1 ]
Chaudhuri, P [1 ]
机构
[1] Indian Assoc Cultivat Sci, Energy Res Unit, Calcutta 700032, W Bengal, India
关键词
D O I
10.1016/S0009-2614(98)01186-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In the radio-frequency (rf) glow discharge plasma of a flowing mixture of silane and argon, the intensities of the peaks at 414.2 and 750.4 nm, arising due to SiH (A (2)Delta-X(2)Pi) and Ar [4p'(1/2)(0)-s'(1/2)(0)] transitions, respectively, have been studied by optical emission spectroscopy with the argon dilution level and the rf power density as the variable parameters. The experimental points have been satisfactorily fitted with the densities of metastable argon and the excited silane, obtained from the kinetics of reactions going on in the plasma. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:211 / 216
页数:6
相关论文
共 15 条
[1]   CONTROL OF MICROSTRUCTURE AND OPTOELECTRONIC PROPERTIES OF SI-H FILMS BY ARGON DILUTION IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM SILANE [J].
CHAUDHURI, P ;
DAS, UK .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (7A) :3467-3473
[2]  
CHAUDHURI P, 1997, JPN J APPL PHYS, V36, pL1426
[3]   Effect of argon dilution on the structure of microcrystalline silicon deposited from silane [J].
Das, UK ;
Chaudhuri, P ;
Kshirsagar, ST .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (09) :5389-5397
[4]   ABNORMALLY LOW ELECTRON-ENERGY AND HEATING-MODE TRANSITION IN A LOW-PRESSURE ARGON RF DISCHARGE AT 13.56 MHZ [J].
GODYAK, VA ;
PIEJAK, RB .
PHYSICAL REVIEW LETTERS, 1990, 65 (08) :996-999
[6]   HYDROGEN ELIMINATION DURING THE GLOW-DISCHARGE DEPOSITION OF A-SI-H ALLOYS [J].
KAMPAS, FJ ;
GRIFFITH, RW .
APPLIED PHYSICS LETTERS, 1981, 39 (05) :407-409
[7]   ORIGIN OF EMITTING SPECIES IN THE PLASMA DEPOSITION OF A-SI-H ALLOYS [J].
KAMPAS, FJ ;
GRIFFITH, RW .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1285-1288
[8]   Roles of SiH3 and SiH2 radicals in particle growth in rf silane plasmas [J].
Kawasaki, H ;
Ohkura, H ;
Fukuzawa, T ;
Shiratani, M ;
Watanabe, Y ;
Yamamoto, Y ;
Suganuma, S ;
Hori, M ;
Goto, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B) :4985-4988
[9]   LASER-INDUCED-FLUORESCENCE DETECTION OF SIH2 RADICALS IN A RADIOFREQUENCY SILANE PLASMA [J].
KONO, A ;
KOIKE, N ;
OKUDA, K ;
GOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L543-L546