共 15 条
[1]
CONTROL OF MICROSTRUCTURE AND OPTOELECTRONIC PROPERTIES OF SI-H FILMS BY ARGON DILUTION IN PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM SILANE
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1995, 34 (7A)
:3467-3473
[2]
CHAUDHURI P, 1997, JPN J APPL PHYS, V36, pL1426
[8]
Roles of SiH3 and SiH2 radicals in particle growth in rf silane plasmas
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1997, 36 (7B)
:4985-4988
[9]
LASER-INDUCED-FLUORESCENCE DETECTION OF SIH2 RADICALS IN A RADIOFREQUENCY SILANE PLASMA
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1993, 32 (4A)
:L543-L546