Identification of surface anion antisite defects in (110) surfaces of III-V semiconductors

被引：11

作者：

Ebert, P

Quadbeck, P

Urban, K

Henninger, B

Horn, K

Schwarz, G

Neugebauer, J

Scheffler, M

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 18期

关键词：

D O I：

10.1063/1.1408906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very localized defect state which gives rise to a distinct feature in scanning tunneling microscopy images. (C) 2001 American Institute of Physics.

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页码：2877 / 2879

页数：3

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