A novel oxygen gas sensor utilizing thin film diamond diode with catalyzed tin oxide electrode

被引：11

作者：

Gurbuz, Y ^{[1
]}

Kang, WP ^{[1
]}

Davidson, JL ^{[1
]}

Kerns, DV ^{[1
]}

机构：

[1] VANDERBILT UNIV,DEPT ELECT & COMP ENGN,NASHVILLE,TN 37235

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1996年 / 36卷 / 1-3期

关键词：

diamond; diode; oxygen; sensor;

D O I：

10.1016/S0925-4005(97)80086-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

A novel microelectronic device utilizing the gas sensing properties of tin oxide SnOx and electrical properties of plasma enhanced chemical vapor deposited (PECVD) diamond film for oxygen gas sensing at higher and wide temperature range is presented in this paper. The sensor is fabricated as a layer of catalyst/SnOx(adsorptive oxide)/i(intrinsic)-diamond/p(+)-diamond CAIS structure. The performance of the new microelectronic gas sensor has demonstrated a large sensitivity to oxygen gas. The response is reproducible and repeatable. Activation energy of oxygen adsorption by the new microelectronic gas sensor is low. The sensor has also indicated CO detection in air ambient.

引用

页码：303 / 307

页数：5

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