Injection locking properties of a microchip laser

被引:13
作者
Lariontsev, EG [1 ]
Zolotoverkh, I
Besnard, P
Stéphan, GM
机构
[1] Moscow MV Lomonosov State Univ, Inst Nucl Phys, Moscow 119899, Russia
[2] Ecole Natl Sci Appl & Technol, CNRS, Lab Optron Associe, F-22305 Lannion, France
关键词
D O I
10.1007/s100530050235
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
An injected microchip laser is theoretically studied, with the use of two models: in the first model, which is traditional, the field is represented by a single frequency component in the slowly-varying envelope approximation. In the second model, referred to as the Fabry-Perot model, two field components are considered which are respectively centered around the frequency of an eigenmode of the injected laser and the frequency of the injected field. Computation of locking ranges, bistability do mains are performed and the results compared. They show not only an improved precision of the second model but also a necessity to use it to describe some effects such as the bistable domains in the limits of the locking domains.
引用
收藏
页码:107 / 117
页数:11
相关论文
共 38 条
[21]  
LIU JM, 1994, IEEE J QUANTUM ELECT, V30, P957
[22]   Transverse patterns in a laser with an injected signal [J].
Longhi, S .
PHYSICAL REVIEW A, 1997, 56 (03) :2397-2407
[23]   Traveling and standing waves in a laser with an injected signal [J].
Longhi, S .
PHYSICAL REVIEW A, 1997, 56 (02) :1553-1563
[24]   STABLE-LOCKING BANDWIDTH IN SIDEMODE INJECTION LOCKED SEMICONDUCTOR-LASERS [J].
LUO, JM ;
OSINSKI, M .
ELECTRONICS LETTERS, 1991, 27 (19) :1737-1739
[25]   Stability and dynamics of an injection-locked semiconductor laser array [J].
Mercier, J ;
McCall, M .
OPTICS COMMUNICATIONS, 1997, 138 (1-3) :200-210
[26]   The theory of radiation injection into a diode laser array [J].
Napartovich, AP ;
Vysotsky, DV .
OPTICS COMMUNICATIONS, 1997, 141 (1-2) :91-98
[27]   OPTICAL BISTABILITY AND NON-LINEAR RESONANCE IN A RESONANT-TYPE SEMICONDUCTOR-LASER AMPLIFIER [J].
OTSUKA, K ;
KOBAYASHI, S .
ELECTRONICS LETTERS, 1983, 19 (07) :262-263
[28]   OPTICAL-INJECTION INDUCED POLARIZATION BISTABILITY IN VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].
PAN, ZG ;
JIANG, SJ ;
DAGENAIS, M ;
MORGAN, RA ;
KOJIMA, K ;
ASOM, MT ;
LEIBENGUTH, RE ;
GUTH, GD ;
FOCHT, MW .
APPLIED PHYSICS LETTERS, 1993, 63 (22) :2999-3001
[29]   LOCKING BANDWIDTH AND RELAXATION OSCILLATIONS OF AN INJECTION-LOCKED SEMICONDUCTOR-LASER [J].
PETITBON, I ;
GALLION, P ;
DEBARGE, G ;
CHABRAN, C .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (02) :148-154
[30]   Intensity noise of injection-locked lasers: Quantum theory using a linearized input-output method [J].
Ralph, TC ;
Harb, CC ;
Bachor, HA .
PHYSICAL REVIEW A, 1996, 54 (05) :4359-4369