Robust bi-stable memory operation in single-layer graphene ferroelectric memory

被引：145

作者：

Song, Emil B. ^{[1
]}

Lian, Bob ^{[1
]}

Kim, Sung Min ^{[1
]}

Lee, Sejoon ^{[1
,2
]}

Chung, Tien-Kan ^{[3
]}

Wang, Minsheng ^{[1
]}

Zeng, Caifu ^{[1
]}

Xu, Guangyu ^{[1
]}

Wong, Kin ^{[1
]}

Zhou, Yi ^{[1
]}

Rasool, Haider I. ^{[4
]}

Seo, David H. ^{[5
]}

Chung, Hyun-Jong ^{[5
]}

Heo, Jinseong ^{[5
]}

Seo, Sunae ^{[6
]}

Wang, Kang L. ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Dongguk Univ Seoul, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

[3] Natl Chiao Tung Univ, Dept Mech Engn, Hsinchu 300, Taiwan

[4] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

[5] Samsung Adv Inst Technol, Yongin 446712, Gyeonggi, South Korea

[6] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 04期

关键词：

D O I：

10.1063/1.3619816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With the motivation of realizing an all graphene-based circuit for low power, we present a reliable nonvolatile graphene memory device, single-layer graphene (SLG) ferroelectric field-effect transistor (FFET). We demonstrate that exfoliated single-layer graphene can be optically visible on a ferroelectric lead-zirconate-titanate (PZT) substrate and observe a large memory window that is nearly equivalent to the hysteresis of the PZT at low operating voltages in a graphene FFET. In comparison to exfoliated graphene, FFETs fabricated with chemical vapor deposited (CVD) graphene exhibit enhanced stability through a bi-stable current state operation with long retention time. In addition, we suggest that the trapping/de-trapping of charge carriers in the interface states is responsible for the anti-hysteresis behavior in graphene FFET on PZT. (C) 2011 American Institute of Physics. [doi:10.1063/1.3619816]

引用

页数：3

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