Magnetoelectric Charge Trap Memory

被引：89

作者：

Bauer, Uwe ^{[1
]}

Przybylski, Marek ^{[2
]}

Kirschner, Juergen ^{[2
]}

Beach, Geoffrey S. D. ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[2] Max Planck Inst Mikrostrukturphys, D-06120 Halle, Germany

来源：

NANO LETTERS | 2012年 / 12卷 / 03期

基金：

美国国家科学基金会;

关键词：

Magnetoelectric effect; electric field control of magnetic properties; charge trap flash memory; magneto-optical writing; magnetic anisotropy; MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; MANIPULATION; TRANSITION; ANISOTROPY; STRESS; FILMS;

D O I：

10.1021/nl204114t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

It is demonstrated that a charge-trapping layer placed in proximity to a ferromagnetic metal enables efficient electrical and optical control of the metal's magnetic properties. Retention of charge trapped inside the charge-trapping layer provides nonvolatility to the magnetoelectric effect and enhances its efficiency by an order of magnitude. As such, an engineered charge-trapping layer can be used to realize the magnetoelectric equivalent to today's pervasive charge trap flash memory technology. Moreover, by supplying trapped charges optically instead of electrically, a focused laser beam can be used to imprint the magnetic state into a continuous metal film.

引用

页码：1437 / 1442

页数：6

共 32 条

[1] MIM capacitance variation under electrical stress [J].