ZnO p-n junctions produced by a new route

被引：39

作者：

Hazra, SK ^{[1
]}

Basu, S ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 07期

关键词：

ZnO; p-n homojunction; temperature; tunneling; ideality factor;

D O I：

10.1016/j.sse.2005.04.015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO p-n homojunctions have been fabricated by depositing p-type ZnO thin films using an innovative CVD method on n-type ZnO films produced by conventional D.C sputtering on glass substrates. The individual oxides have been characterized for ohmic contact by current-voltage (I-V) measurements and the semiconducting electrical parameters have been determined by resistivity and Hall effect measurements at room temperature. The formation of ZnO p-n homojunctions has been studied by I-V characteristics at 30, 300 and 400 degrees C. Rectifying nature was observed in the measured I-V curves. The ideality factor, saturation current and the barrier height for the forward bias have been calculated as a function of temperature. The improvement of the junction properties was observed from the decrease in the value of the ideality factor with the increase in temperature. A qualitative energy band diagram of the homejunction has been constructed in order to explain the interband carrier tunneling mechanism. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1158 / 1162

页数：5

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