CdTe(111)B grown on Si(111) by molecular beam epitaxy

被引：25

作者：

Rujirawat, S ^{[1
]}

Xin, Y

Browning, ND

Sivananthan, S

Smith, DJ

Tsen, SCY

Chen, YP

Nathan, V

机构：

[1] Univ Illinois, Dept Phys, Chicago, IL 60607 USA

[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA

[3] Arizona State Univ, Ctr Solid State Sci, Tempe, AZ 85287 USA

[4] EPIR Ltd, Lisle, IL 60532 USA

[5] USAF, Res Lab VSSS, Kirtland AFB, NM 87117 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 16期

关键词：

D O I：

10.1063/1.123846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the growth of large-area, domain-free CdTe(111) single crystals on As-passivated Si(111) substrates by molecular beam epitaxy using ZnTe buffer layers. The crystal quality of the CdTe(111)B/ZnTe(111)B/Si(111) films was examined by x-ray diffraction (56 arcs), etch-pit-density (2 x 10(5) cm(-2)) analysis, and transmission electron microscopy, and was found to be comparable to or better than the best CdTe(111)B films grown directly on vicinal Si(001). Surface reconstructions were observed by reflection high-energy electron diffraction at different stages. Diffraction intensity oscillations demonstrated the layer-by-layer growth mode of the CdTe surface. An interface model for these films is proposed. (C) 1999 American Institute of Physics. [S0003-6951(99)02916-2].

引用

页码：2346 / 2348

页数：3

共 23 条

[1] Growth of high quality CdTe on Si substrates by molecular beam epitaxy [J].