Resistive switching effect in SrTiO3-δ/Nb-doped SrTiO3 heterojunction

被引：80

作者：

Ni, M. C. ^{[1
]}

Guo, S. M.

Tian, H. F.

Zhao, Y. G.

Li, J. Q.

机构：

[1] Tsing Hua Univ, Dept Phys, Beijing 100084, Peoples R China

[2] Changchun Univ Sci & Technol, Dept Phys, Changchun 130022, Peoples R China

[3] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 18期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2803317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the fabrication and properties of SrTiO3-delta/Nb-doped SrTiO3 heterojunctions. The current-voltage curves of these junctions show hysteresis and remarkable resistive switching behavior. Hysteresis was also observed in the capacitance-voltage curves of these junctions. Upon applying voltage pulses, the resistance of the heterojunctions can be switched between different states and the relaxation of the junction current after switching follows the Curie-Von Schweidler law. The results were discussed by considering the role of defects in the interfacial depletion region of the heterojunctions. This work indicates that heterojunctions composed of two oxides can also show the switching effect, which is useful for applications. (C) 2007 American Institute of Physics.

引用

页数：3

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