Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

被引：37

作者：

Fu, L ^{[1
]}

Tan, HH ^{[1
]}

Johnston, MB ^{[1
]}

Gal, M ^{[1
]}

Jagadish, C ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Proton irradiation with subsequent rapid thermal annealing was used to investigate intermixing of InGaAs/GaAs and InGaAs/AlGaAs quantum wells. Large photoluminescence (PL) energy shifts were observed in both materials. Comparatively, InGaAs/AlGaAs samples showed larger PL energy shifts than InGaAs/GaAs samples because of the presence of Al in the barriers and also better recovery of PL intensities, which is mainly due to dynamic annealing effects in AlGaAs during irradiation. Based on this, InGaAs/AlGaAs quantum-well lasers were fabricated and up to 49.3-nm-emission wavelength shift was observed in the proton-irradiated laser with no significant degradation in device characteristics. (C) 1999 American Institute of Physics. [S0021-8979(99)09609-7].

引用

页码：6786 / 6789

页数：4

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