Electrical and thermal modeling of the non-Ohmic differential conductance in a tunnel junction containing a pinhole

被引:18
作者
Zhang, ZS [1 ]
Rabson, DA [1 ]
机构
[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA
关键词
D O I
10.1063/1.1633341
中图分类号
O59 [应用物理学];
学科分类号
摘要
To test the quality of a tunnel junction, one sometimes fits the bias-dependent differential conductance to a theoretical model, such as Simmons's formula. Recent experimental work by Akerman and collaborators, however, has demonstrated that a good fit does not necessarily imply a good junction. Modeling the electrical and thermal properties of a tunnel junction containing a pinhole, we extract an effective barrier height and effective barrier width even when as much as 88% of the current flows through the pinhole short rather than tunneling. A good fit of differential conductance to a tunneling form therefore cannot rule out pinhole defects in normal metal or magnetic tunnel junctions. (C) 2004 American Institute of Physics.
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页码:557 / 560
页数:4
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