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Determination of relative internal quantum efficiency in InGaN/GaN quantum wells

被引：23
作者：
Martinez, CE
Stanton, NM
Kent, AJ
Graham, DM
Dawson, P
Kappers, MJ
Humphreys, CJ
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Manchester, Sch Phys & Astron, Manchester M60 1QD, Lancs, England
[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源：
JOURNAL OF APPLIED PHYSICS | 2005年 / 98卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.2033144
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the relative quantum efficiency in a series of InGaN/GaN single quantum wells with differing indium concentration. The results of measurements involving direct detection of phonons emitted as a result of nonradiative recombination and carrier energy relaxation are compared with time-resolved photoluminescence studies. Using these complementary techniques we have extracted the low-temperature internal quantum efficiency of the recombination and observed the effect of free-carrier screening on the radiative and nonradiative processes in the quantum well samples. All the samples exhibit high quantum efficiency, with the maximum being observed in the 10% indium sample. In addition, we observe the appearance of a delayed phonon signal, which we correlate to the measured quantum efficiency of the samples.
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页数：5
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