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Evaluation of spin-transfer switching in CoFeB/MgO/CoFeB magnetic tunnel junctions

被引：135
作者：
Kubota, H
Fukushima, A
Ootani, Y
Yuasa, S
Ando, K
Maehara, H
Tsunekawa, K
Djayaprawira, DD
Watanabe, N
Suzuki, Y
机构：
[1] Natl Inst Adv Ind Sci & Technol AIST, NeRI, Tsukuba, Ibaraki 3058568, Japan
[2] JST Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan
[3] ANELVA Corp, Electron Device Div, Tokyo 1838508, Japan
[4] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 37-41期
关键词：
spin-transfer switching; MgO; magnetic tunnel junction; switching current density; tunnel magnetoresistance; magneto resistive random access memory;
D O I：
10.1143/JJAP.44.L1237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Current-induced magnetization switching was demonstrated on Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions (MTJs), which exhibited giant tunnel magnetoresistance ratios of about 100%. Switching current density at a pulse duration of 100 ms was about 6 x 10(6) A/cm(2) at room temperature. The switching current density was reduced to one-third of the smallest value for the MgO-based MTJs reported to date. Dependence of the switching current on pulse duration and on the external magnetic field was discussed based on a theoretical model incorporating thermally activated spin-transfer switching. The spin-transfer switching in the MgO-based MTJs realizes low writing power consumption and a high read-out signal in high-density magnetoresistive random access memory.
引用
收藏
页码：L1237 / L1240
页数：4
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