Single particle-induced latchup

被引:99
作者
Bruguier, G
Palau, JM
机构
[1] Centre d'Electronique de Montpellier, Université, Montoellier II
关键词
D O I
10.1109/23.490898
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents an up-to-date overview of the single-event latchup (SEL) hard failure mode encountered in electronic device applications involving heavy ion environment. This phenomenon is specific to CMOS technology. Single-event latchup is discussed after a short description of the effects induced by the interaction of a heavy ion with silicon. Understanding these effects is necessary to understand the different failures. This paper includes a description of the latchup phenomenon and the different triggering modes, reviews of models and hardening solutions, and finally presents new developments in simulation approaches.
引用
收藏
页码:522 / 532
页数:11
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