Electric-field-induced transport of protons in amorphous SiO2 -: art. no. 233406

被引：18

作者：

Devine, RAB

Herrera, GV

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.63.233406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature and time dependence of electric-field-induced motion of thermally generated protons in 20 nm amorphous SiO2 films has been investigated The short-time behavior is found to involve an activation energy of similar to0.38 eV and a hopping distance of similar to0.55 nm. The activation energy is considerably smaller than that found for radiation-generated proton motion (similar to0.82 eV). The hopping distance is consistent with transport involving motion between a bridging oxygen atom and a next-nearest-neighbor (or farther) bridging oxygen atom; this suggests that motion is primarily via cross-ring hopping.

引用

页数：4

共 16 条

[1] TIME-DEPENDENCE OF RADIATION-INDUCED INTERFACE TRAP FORMATION IN METAL-OXIDE-SEMICONDUCTOR DEVICES AS A FUNCTION OF OXIDE THICKNESS AND APPLIED FIELD [J].