Compressibility of graphene

被引:18
作者
Abergel, D. S. L. [1 ]
Hwang, E. H. [1 ]
Das Sarma, S. [1 ]
机构
[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA
来源
PHYSICAL REVIEW B | 2011年 / 83卷 / 08期
关键词
QUANTUM CAPACITANCE;
D O I
10.1103/PhysRevB.83.085429
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We develop a theory for the compressibility and quantum capacitance of disordered monolayer and bilayer graphene, including the full hyperbolic band structure and band gap in the latter case. We include the effects of disorder in our theory, which are of particular importance at the carrier densities near the Dirac point. We account for this disorder statistically using two different averaging procedures: first via averaging over the density of carriers directly, and then via averaging in the density of states to produce an effective density of carriers. We also compare the results of these two models with experimental data, and to do this we introduce a model for interlayer screening which predicts the size of the band gap between the low-energy conduction and valence bands for arbitrary gate potentials applied to both layers of bilayer graphene. We find that both models for disorder give qualitatively correct results for gapless systems, but when there is a band gap in the low-energy band structure, the density of states averaging is incorrect and disagrees with the experimental data.
引用
收藏
页数:9
相关论文
共 20 条
[11]   Band Structure Asymmetry of Bilayer Graphene Revealed by Infrared Spectroscopy [J].
Li, Z. Q. ;
Henriksen, E. A. ;
Jiang, Z. ;
Hao, Z. ;
Martin, M. C. ;
Kim, P. ;
Stormer, H. L. ;
Basov, D. N. .
PHYSICAL REVIEW LETTERS, 2009, 102 (03)
[12]   Observation of electron-hole puddles in graphene using a scanning single-electron transistor [J].
Martin, J. ;
Akerman, N. ;
Ulbricht, G. ;
Lohmann, T. ;
Smet, J. H. ;
Von Klitzing, K. ;
Yacoby, A. .
NATURE PHYSICS, 2008, 4 (02) :144-148
[13]   Landau-level degeneracy and quantum hall effect in a graphite bilayer [J].
McCann, E ;
Fal'ko, VI .
PHYSICAL REVIEW LETTERS, 2006, 96 (08) :1-4
[14]   Asymmetry gap in the electronic band structure of bilayer graphene [J].
McCann, Edward .
PHYSICAL REVIEW B, 2006, 74 (16)
[15]   Ab initio theory of gate induced gaps in graphene bilayers [J].
Min, Hongki ;
Sahu, Bhagawan ;
Banerjee, Sanjay K. ;
MacDonald, A. H. .
PHYSICAL REVIEW B, 2007, 75 (15)
[16]   Ground State of Graphene in the Presence of Random Charged Impurities [J].
Rossi, Enrico ;
Das Sarma, S. .
PHYSICAL REVIEW LETTERS, 2008, 101 (16)
[17]  
SENSARMA R, ARXIV11021427
[18]   Fermi liquid theory of a Fermi ring [J].
Stauber, T. ;
Peres, N. M. R. ;
Guinea, F. ;
Castro Neto, A. H. .
PHYSICAL REVIEW B, 2007, 75 (11)
[19]  
Xia JL, 2009, NAT NANOTECHNOL, V4, P505, DOI [10.1038/NNANO.2009.177, 10.1038/nnano.2009.177]
[20]  
YOUNG AF, ARXIV10045556V2