Fermi-level depinning for low-barrier Schottky source/drain transistors

被引：125

作者：

Connelly, D ^{[1
]}

Faulkner, C ^{[1
]}

Clifton, PA ^{[1
]}

Grupp, DE ^{[1
]}

机构：

[1] Acorn Technol, Palo Alto, CA 94306 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 01期

关键词：

D O I：

10.1063/1.2159096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By imposing an ultrathin insulator between low-work function metals and silicon, the Schottky barrier of the junction can be substantially reduced, decreasing junction resistance. With this approach, low-Schottky-barrier metal source/drain (S/D) transistors with Mg and Yb as S/D metals are demonstrated. (c) 2006 American Institute of Physics.

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页数：3

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